High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

IEEE Photonics Technology Letters

Volumn 17, Issue 6, 2005, Pages 1139-1141

  Liu, H Y ^a   Childs, David T ^b   Badcock, T J ^a   Groom, K M ^a   Sellers, Ian R ^a   Hopkinson, M ^a   Hogg, R A ^a   Robbins, Dave J ^b   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

Epitaxial growth; Quantum dots (QDs); Semiconductor diodes; Semiconductor lasers

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRIC CURRENTS; EPITAXIAL GROWTH; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM DOTS;

HIGH REFLECTIVITY (HR) COATED FACETS; QUANTUM DOT LASERS; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 20544446361     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.846948     Document Type: Article

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