Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

Journal of Electronic Materials

Volumn 28, Issue 7, 1999, Pages 878-880

  Seaford, M L ^a   Hesse, P J ^a   Tomich, D H ^a   Eyink, K G ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL LATTICES; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRAIN; SUBSTRATES; SURFACES; WETTING;

COMPLIANT UNIVERSAL SUBSTRATE; DISLOCATION FREE LATTICE MISMATCHED MATERIALS; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; STRAIN RELIEF; SURFACE UNDULATIONS; TWIST BONDING PROCESS;

GALLIUM COMPOUNDS;

EID: 0032691632     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0213-9     Document Type: Article

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