Quantum behavior of graphene transistors near the scaling limit

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1417-1423

  Wu, Yanqing ^a   Perebeinos, Vasili ^a   Lin, Yu Ming ^a   Low, Tony ^a   Xia, Fengnian ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

ballistic transport; Fermi level pinning; Graphene; minimum conductivity; phase coherence; quantum interference

Indexed keywords

BALLISTIC REGIME; BALLISTIC TRANSPORTS; BARRIER WIDTHS; CHANNEL LENGTH; DIFFUSIVE REGIME; EXTERNAL COMPONENTS; FABRY-PEROT OSCILLATIONS; FERMI-LEVEL PINNING; GRAPHENE TRANSISTORS; INTRINSIC PROPERTY; METALLIC CONTACTS; ON/OFF CURRENT RATIO; PHASE COHERENCE; PHASE-COHERENT TRANSPORT; QUANTUM BEHAVIORS; QUANTUM DEVICE; QUANTUM INTERFERENCE; QUANTUM INTERFERENCE EFFECTS; SCALING LIMITS; SUB-100 NM; TOP GATE;

BALLISTICS; DIAGNOSIS; HETEROJUNCTIONS; QUANTUM INTERFERENCE DEVICES; QUANTUM THEORY;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MODELS, CHEMICAL; NANOSTRUCTURES; PARTICLE SIZE; TRANSISTORS, ELECTRONIC;

EID: 84858247431     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204088b     Document Type: Article

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