Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Zhang, Aihua ^a   Teoh, Hao Fatt ^a   Dai, Zhenxiang ^a   Feng, Yuan Ping ^a   Zhang, Chun ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIDOT LATTICE; BAND GAP ENGINEERING; BAND GAPS; CARBON ATOMS; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES STUDY; INTERVALLEY SCATTERING; LIGHT EMITTING DEVICES; PHOTO-ELECTROCHEMISTRY; SCALING RULES;

BORON NITRIDE; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; GRAPHENE;

ENERGY GAP;

EID: 78751564421     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536517     Document Type: Article

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