Contact effects in graphene nanoribbon transistors

Nano Letters

Volumn 8, Issue 7, 2008, Pages 1819-1824

  Liang, Gengchiau ^a   Neophytou, Neophytos ^b   Lundstrom, Mark S ^b   Nikonov, Dmitri E ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b PURDUE UNIVERSITY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT EFFECTS; CONTACT TYPES; DEVICE CHANNELS; DIRAC POINTS; DOUBLE GATES; FIELD EFFECTS; FINITE SIZES; GRAPHENE; GRAPHENE NANORIBBON; GRAPHENE SHEETS; LOW DENSITIES; METALLIC PROPERTIES; NANORIBBON; NORMAL METALS; POISSON SOLVERS; QUANTUM TRANSPORT SIMULATORS; REAL SPACES; RECTANGULAR SHAPES; SCHOTTKY BARRIERS; SEMI INFINITES;

QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCHOTTKY BARRIER DIODES; SHEET METAL; THREE DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 57849123887     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080255r     Document Type: Article

References (29)

1. Geim, A. K.; Novoselov, K. S. Nat. Mater. 2007, 6, 183.
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Nature 2005, 438, 197.
3. Zhang, Y.; Tan, Y.; Stormer, H. L.; Kim, P. Nature 2005, 438, 201.
4. Berger, C; Song, Z.; Li, X.; Wu, X.; Brown, N.; Naud, C.; Mayou, D.; Li, T.; Hass, J.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; de Heer, W. A. Science 2006, 312, 1191.
5. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Science 2008, 319, 1229.
6. Lemme, M. C.; Echtermeyer, T. J.; Baus, M.; Kurz, H. IEEE Electronic-Device Letters 2007, 28 (4). 282.
7. Liang, G.-C; Neophytou, N.; Nikonov, D. E.; Lundstrom, M. S. IEEE Trans. Electron Devices 2007, 54 (4), 677. Liang, G.-C; Neophytou, N.; Lundstrom, M. S.; Nikonov, D. E. Proceedings NSTI Nanotech 2007, Santa Clara, May 20-24, 2007: pp. 127-130.
8. Ouyang, Y.; Yoon, Y.; Fodor, J. K.; Guo, J. Appl. Phys. Lett. 2006, 89, 203107.
9. Yan, Q.; Huang, B.; Yu, J.; Zheng, F.; Zang, J.; Wu, J.; Gu, B.-L.; Liu, F.; Duan, W. Nano Lett. 2007, 7, 1469.
10. Liang, G.-C; Neophytos, N.; Lundstrom, M.; Nikonov, D. J. Appl. Phys. 2007, 102, 054307.
11. Ouyang, Y.; Yoon, Y.; Guo, J. IEEE Trans. Electron Devices 2007, 54 (9), 2223.
12. Fiori, G.; Iannaccone, G. IEEE Electron Device Lett. 2007, 28, 760.
13. Wang, Z. F.; Shi, Q. W.; Li, Q.; Wang, X.; Hou, J. G.; Zheng, H.; Yao, Y.; Chenb, J. Appl. Phys. Lett. 2007, 91, 053109.
14. Xu, Z.; Zheng, Q.; Chen, G. Appl. Phys. Lett. 2007, 91, 223115.
15. Areshkin, D. A.; White, C. T. Nano Lett. 2007, 7, 3253.
16. Muñoz-Rojas, F.; Jacob, D.; Fernández-Rossier, J.; Palacios, J. J. Phys. Rev. B 2006, 74, 195417.
17. Datta, S. Electronic Transport in Mesoscopic System, Cambridge, 1995.
18. Saito, R.; Dresselhaus, G.; Dresselhaus, M. Physical Properties of Carbon Nanotubes, Imperial College Press: London, 1998.
19. Son, Y.; Cohen, M. L.; Louie, S. G. Phys. Rev. Lett. 2006, 97, 216803.
20. 20,24 However, in this work for the case of the generic metal, we try to give a qualitative understanding on the behavior of a contact with constant density of states, rather than quantitative comparisons between devices with normal metal and the rest of the contacts.
21. Guo, J. Ph.D. Thesis, Purdue University, 2005.
22. Muñoz-Rojas, F.; Fernández-Rossier. J.; Brey, L.; Palacios. J. J. Phys. Rev. B 2008, 77, 045301.
23. deviceLDOS(x,E) dx.
24. Liang, G.-C.; Neophytos, N.; Lundstrom, M.; Nikonov, D. Journal of Computational Electronics, accepted.
25. Özyilmaz, B.; Jarillo-Herrero, P.; Efetov, D.; Abanin, D. A.; Levitov. L. S.; Kim, P. Phys. Rev. Lett. 2007, 99, 166804.
26. Radosavljevic, M.; Appenzeller, J.; Avouris, Ph. Appl. Phys. Lett. 2004. 84 (18), 3693.
27. Chen, Z.; Appenzeller, J.; Knoch, J.; Lin, Y.; Avouris, Ph. Nano Lett. 2005. 5, 1497.
28. Guo, J.; Lundstrom, M. IEEE Trans. Electron Devices 2002. 49, 1897.
29. Özyilmaz, B.; Jarillo-Herrero, P.; Efetov, D.; Kim, P. Appl. Phys. Lett. 2007, 91, 192107.