The conduction gap in double gate bilayer graphene structures

Journal of Physics Condensed Matter

Volumn 22, Issue 11, 2010, Pages

  Hung Nguyen, V ^a,b   Bournel, A ^a   Dollfus, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CONDUCTION GAP; DEVICE PARAMETERS; DOUBLE GATE; ELECTRICAL BEHAVIORS; ELECTRICAL CURRENT; ENERGY BANDGAPS; EXPERIMENTAL INVESTIGATIONS; FERMI ENERGY; GATE LENGTH; GATE VOLTAGES; NONEQUILIBRIUM GREEN FUNCTION METHODS;

GRAPHENE;

GRAPHITE;

EID: 77749322498     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/11/115304     Document Type: Article

References (29)

1. Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
2. Novoselov K S, McCann E, Morozov S V, Fal'ko V I, Katsnelson M I, Zeitler U, Jiang D, Schedin F and Geim A K 2006 Nat. Phys. 2 177
3. Cresti A, Nemec N, Biel B, Niebler G, Triozon F, Cuniberti G and Roche S 2008 Nano Res. 1 361
4. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
5. Katsnelson M I, Novoselov K S and Geim A K 2006 Nat. Phys. 2 620
6. Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
7. Echtermeyer T J, Lemme M C, Baus M, Szafranek B N, Geim A K and Kurz H 2008 IEEE Electron Device Lett. 29 952
8. Sordan R, Traversi F and Russo V 2009 Appl. Phys. Lett. 94 073305
9. Wang H, Nezich D, Kong J and Palacios T 2009 IEEE Electron Device Lett. 30 547
10. Zhao P, Chauhan J and Guo J 2009 Nano Lett. 9 684
11. Zhou S Y, Gweon G-H, Fedorov A V, First P N, de Heer W A, Lee D-H, Guinea F, Castro Neto A H and Lanzara A 2007 Nat. Mater. 6 770
12. Han M Y, Ozyilmaz B, Zhang Y and Kim P 2007 Phys. Rev. Lett. 98 206805
13. Castro E V, Novoselov K S, Morozov S V, Peres N M R, dos Santos J M B L, Nilsson J, Guinea F, Geim A K and Castro Neto A H 2007 Phys. Rev. Lett. 99 216802
14. Oostinga J B, Heersche H B, Liu X, Morpurgo A F and Vandersypen L M K 2008 Nat. Mater. 7 151
15. Zhang Y, Tang T-T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R and Wang F 2009 Nature 459 820
16. Russo S, Craciun M F, Yamamoto M, Tarucha S and Morpurgo A F 2009 New J. Phys. 11 095018
17. Nilsson J, Castro Neto A H, Guinea F and Peres N M R 2007 Phys. Rev. B 76 165416
18. Barbier M, Vasilopoulos P, Peeters F M and Pereira J M Jr 2009 Phys. Rev. B 79 155402
19. Ouyang Y, Campbell P and Guo J 2008 Appl. Phys. Lett. 92 063120
20. Fiori G and Iannaccone G 2009 IEEE Electron Device Lett. 30 261
21. Pereira J M Jr, Vasilopoulos P and Peeters F M 2007 Nano Lett. 7 946
22. Pereira J M Jr, Peeters F M, Vasilopoulos P, Costa Filho R N and Farias G A 2009 Phys. Rev. B 79 195403
23. Nam Do V, Hung Nguyen V, Dollfus P and Bournel A 2008 J. Appl. Phys. 104 063708
24. Nam Do V and Dollfus P 2009 J. Appl. Phys. 106 023719
25. Hung Nguyen V, Bournel A, Lien Nguyen V and Dollfus P 2009 Appl. Phys. Lett. 95 232115
26. McCann E 2006 Phys. Rev. B 74 161403(R)
27. Gava P, Lazzeri M, Saitta A M and Mauri F 2009 Phys. Rev. B 79 165431
28. Lopez Sancho M P, Lopez Sancho J M and Rubio J 1984 J. Phys. F: Met. Phys. 14 1205
29. Fiori G and Iannaccone G 2009 IEEE Electron Device Lett. 30 1096