Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Liang, Gengchiau ^a   Neophytou, Neophytos ^b   Lundstrom, Mark S ^b   Nikonov, Dmitri E ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b PURDUE UNIVERSITY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTROSTATICS; FERMI LEVEL; GREEN'S FUNCTION; QUANTUM THEORY;

BALLISTIC GRAPHENE NANORIBBON; QUANTUM EFFECTS; QUANTUM TRANSPORT SIMULATORS; QUANTUM TUNNELING;

MOSFET DEVICES;

EID: 34548658933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775917     Document Type: Article

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