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Volumn 48, Issue 2, 2013, Pages 752-759

Nano-crystalline p-ZnGa2Te4/n-Si as a new heterojunction diode

Author keywords

A. Thin films; B. Vapor deposition; C. Atomic force microscopy; D. Electrical properties

Indexed keywords

AFM; BARRIER HEIGHTS; BASIC PARAMETERS; BIASING CONDITIONS; CONDUCTION MECHANISM; DARK CURRENT-VOLTAGE; ELECTRICAL PARAMETER; ELECTRONIC DEVICE; HETEROJUNCTION DIODES; IDEALITY FACTORS; NANOCRYSTALLINES; SERIES RESISTANCES; SHUNT RESISTANCES; SPACE-CHARGE LIMITED; TEMPERATURE INTERVALS; THERMAL EVAPORATION TECHNIQUE; TOTAL DENSITY; TRAP-CHARGE LIMITEDS; XRD PATTERNS;

EID: 84871714406     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.11.013     Document Type: Article
Times cited : (7)

References (54)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.