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Volumn 507, Issue 2, 2010, Pages 551-556
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Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)
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Author keywords
Current voltage characteristics; Dc electrical conductivity; Defect chalcopyrite semiconductor; Electrothermal model; Memory switching; Thin films; ZnGa2Se4
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Indexed keywords
AS-DEPOSITED FILMS;
CONDUCTION MECHANISM;
DAVIS MODEL;
DC CONDUCTIVITY;
DC ELECTRICAL CONDUCTIVITY;
ELECTRICAL FIELD;
ELECTRO-THERMAL MODEL;
HIGH-RESISTANCE STATE;
I-V CHARACTERISTIC CURVE;
LOW-RESISTANCE STATE;
MEAN VALUES;
MEMORY SWITCHING;
NEW MATERIAL;
RAPID TRANSITIONS;
SEMICONDUCTOR BEHAVIOR;
THERMAL EVAPORATION TECHNIQUE;
THRESHOLD POINT;
THRESHOLD RESISTANCE;
ZNGA2SE4;
ACTIVATION ENERGY;
AMORPHOUS FILMS;
COPPER COMPOUNDS;
DEFECTS;
DIFFRACTION;
ELECTRIC CONDUCTIVITY;
HEATING;
HOLOGRAPHIC INTERFEROMETRY;
PHASE CHANGE MEMORY;
SEMICONDUCTING SELENIUM COMPOUNDS;
SWITCHING;
THERMAL EVAPORATION;
THIN FILMS;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 77957173045
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.08.021 Document Type: Article |
Times cited : (30)
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References (43)
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