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Volumn 507, Issue 2, 2010, Pages 551-556

Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs)

Author keywords

Current voltage characteristics; Dc electrical conductivity; Defect chalcopyrite semiconductor; Electrothermal model; Memory switching; Thin films; ZnGa2Se4

Indexed keywords

AS-DEPOSITED FILMS; CONDUCTION MECHANISM; DAVIS MODEL; DC CONDUCTIVITY; DC ELECTRICAL CONDUCTIVITY; ELECTRICAL FIELD; ELECTRO-THERMAL MODEL; HIGH-RESISTANCE STATE; I-V CHARACTERISTIC CURVE; LOW-RESISTANCE STATE; MEAN VALUES; MEMORY SWITCHING; NEW MATERIAL; RAPID TRANSITIONS; SEMICONDUCTOR BEHAVIOR; THERMAL EVAPORATION TECHNIQUE; THRESHOLD POINT; THRESHOLD RESISTANCE; ZNGA2SE4;

EID: 77957173045     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.08.021     Document Type: Article
Times cited : (30)

References (43)
  • 20
    • 77957156294 scopus 로고    scopus 로고
    • Original Russian Text Copyright © 2002 by Kerimova, Sultanova
    • Translated from Neorganicheskie Materialy, 38 (2002) 1181, Original Russian Text Copyright © 2002 by Kerimova, Sultanova.
    • (2002) Translated from Neorganicheskie Materialy , vol.38 , pp. 1181


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.