P-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications

Semiconductor Science and Technology

Volumn 25, Issue 9, 2010, Pages

  Yahia, I S ^a   Sakr, G B ^a   Wojtowicz, T ^b   Karczewski, G ^b  

^a Ain Shams University   (Egypt)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; DYNAMIC I-V; GAAS; HETEROSTRUCTURES; ILLUMINATION CONDITIONS; ILLUMINATION INTENSITY; LIGHT INTENSITY; MAXIMUM POWER; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PARAMETERS; RESPONSIVITY; SPACE CHARGE LIMITED CURRENTS;

GALLIUM ALLOYS; GALLIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SWITCHING CIRCUITS; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78649372075     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/9/095001     Document Type: Article

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