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Journal of Materials Science

Volumn 48, Issue 3, 2013, Pages 1134-1140

Memory switching of ZnGa2Te4 thin films

(4) Sakr, G B a Fouad, S S a Yahia, I S a,b Abdel Basset, D M a

a Ain Shams University (Egypt)

b KING KHALID UNIVERSITY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALED FILMS; AS-DEPOSITED FILMS; CHEMICAL COMPOSITIONS; CONDUCTING CHANNELS; CRYSTALLINE PHASIS; DEFECT CHALCOPYRITE STRUCTURE; ENERGY DISPERSIVE X-RAY SPECTROMETRY; IN-PHASE; IV CHARACTERISTICS; MEMORY SWITCHING; POLYCRYSTALLINE; POWDER COMPOUNDS; SINGLE PHASE; SWITCHING PHENOMENON; SWITCHING PROPERTIES; SYNTHESIZED MATERIALS; THERMAL EVAPORATION TECHNIQUE; THERMAL MODEL; THRESHOLD SWITCHING;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; COPPER COMPOUNDS; DEFECTS; DEPOSITS; ELECTRIC PROPERTIES; SWITCHING; THERMAL EVAPORATION; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84871622031 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-012-6850-z Document Type: Article

Times cited : (18)

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