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Volumn 285, Issue 13-14, 2012, Pages 3154-3161
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Structure, optical spectroscopy and dispersion parameters of ZnGa 2Se 4 thin films at different annealing temperatures
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Author keywords
Defect chalcopyrite; Effect of annealing; Optical constants; Optical dispersion parameters; ZnGa 2Se 4
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Indexed keywords
AFM IMAGE;
AMORPHOUS PHASE;
ANNEALED FILMS;
ANNEALING TEMPERATURES;
CHALCOPYRITE STRUCTURES;
CHEMICAL COMPOSITIONS;
DIRECT ENERGY GAPS;
DISLOCATION DENSITIES;
DISPERSION PARAMETERS;
EFFECTIVE MASS;
ELECTRIC SUSCEPTIBILITY;
ENERGY DISPERSIVE X-RAY SPECTROSCOPY;
FREE CARRIERS;
GLASS SUBSTRATES;
GRAPHICAL REPRESENTATIONS;
INTERNAL STRAINS;
OPTICAL DISPERSION;
OPTICAL GAP;
OPTICAL SPECTROSCOPY;
POLYCRYSTALLINE;
POLYCRYSTALLINE FILM;
POWDER COMPOUNDS;
REFRACTIVE INDEX DISPERSION;
SINGLE PHASE;
SINGLE-OSCILLATOR MODEL;
SPITZER;
SWANEPOEL'S METHOD;
SYNTHESIZED MATERIALS;
THERMAL EVAPORATION METHOD;
UNIT CELLS;
XRD ANALYSIS;
ZNGA 2SE 4;
AMORPHOUS FILMS;
AMORPHOUS MATERIALS;
ANNEALING;
COPPER COMPOUNDS;
ENERGY DISPERSIVE SPECTROSCOPY;
OPTICAL CONSTANTS;
REFRACTIVE INDEX;
SEMICONDUCTING SELENIUM COMPOUNDS;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
X RAY DIFFRACTION;
DISPERSIONS;
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EID: 84859773058
PISSN: 00304018
EISSN: None
Source Type: Journal
DOI: 10.1016/j.optcom.2012.02.096 Document Type: Article |
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Times cited : (27)
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References (37)
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