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Volumn 403, Issue 17, 2008, Pages 2690-2697

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

Author keywords

C V; Frequency dependence; I V; Insulator layer; Interface state density; MIS Schottky diodes; Series resistance

Indexed keywords

CAPACITANCE; DIODES; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; SWITCHING CIRCUITS;

EID: 59049101533     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.01.039     Document Type: Article
Times cited : (22)

References (36)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.