|
Volumn 403, Issue 17, 2008, Pages 2690-2697
|
Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes
|
Author keywords
C V; Frequency dependence; I V; Insulator layer; Interface state density; MIS Schottky diodes; Series resistance
|
Indexed keywords
CAPACITANCE;
DIODES;
SCHOTTKY BARRIER DIODES;
SILICON COMPOUNDS;
SWITCHING CIRCUITS;
C-V;
FREQUENCY DEPENDENCE;
I-V;
INSULATOR LAYER;
INTERFACE STATE DENSITY;
MIS SCHOTTKY DIODES;
SERIES RESISTANCE;
SEMICONDUCTING SILICON COMPOUNDS;
|
EID: 59049101533
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2008.01.039 Document Type: Article |
Times cited : (22)
|
References (36)
|