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Thin Solid Films

Volumn 518, Issue 23, 2010, Pages 7156-7160

Determination of contact parameters of Au/Carmine/n-Si Schottky device

(3) Aydoǧan, Şakir a Incekara, Ümit a Türüt, Abdulmecit a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

Carmine; Interface states; Schottky diode; Series resistance

Indexed keywords

ALTERNATING CURRENT; BARRIER HEIGHTS; CARMINE; CHARACTERISTIC PARAMETER; CONTACT PARAMETERS; CURRENT VOLTAGE; ELECTRICAL MEASUREMENT; HIGH FREQUENCY; INTERFACE STATE; INTERFACE STATES DENSITY; IV CHARACTERISTICS; LOW FREQUENCY; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SCHOTTKY DEVICES; SCHOTTKY DIODES; SERIES RESISTANCES;

CAPACITANCE; CAPACITANCE MEASUREMENT; DISTILLATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77956231047 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.06.019 Document Type: Article

Times cited : (35)

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