Structure change of ultra-thin Ni-deposited 6H-SiC(0 0 0 1)- √3 × √3 surface by post-annealing

Surface Science

Volumn 539, Issue 1-3, 2003, Pages 14-20

  Hoshino, Y ^a   Kitamura, O ^a   Nakada, T ^a   Kido, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Low index single crystal surfaces; Medium energy ion scattering (MEIS); Nickel; Reflection high energy electron diffraction (RHEED); Silicon carbide; Surface chemical reaction; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ANNEALING; CHEMICAL BONDS; DEPOSITION; HIGH ENERGY ELECTRON DIFFRACTION; NICKEL; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

POST-ANNEALING;

SURFACE STRUCTURE;

EID: 0042700110     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00701-5     Document Type: Article

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