Effect of different current densities on optical properties of porous silicon carbide using photo-electrochemical etching

Materials Letters

Volumn 88, Issue , 2012, Pages 65-67

  Naderi, N ^a   Hashim, M R ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Atomic force microscopy; Photo electrochemical etching; Porous silicon carbide; Raman spectroscopy

Indexed keywords

OPTICAL CHARACTERIZATION; PHONON VIBRATIONS; PHOTO-ELECTROCHEMICAL ETCHING; RAMAN INTENSITIES; RED SHIFT;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTROCHEMICAL ETCHING; OPTICAL PROPERTIES; POROUS SILICON; RAMAN SPECTROSCOPY;

SILICON CARBIDE;

EID: 84866624945     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.08.014     Document Type: Article

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