The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 183-185

  Jae, Keun Seo ^a   Ko, Ki Han ^a   Won, Seok Choi ^a   Park, Mungi ^b   Jong, Hwan Lee ^c   Yi, Jun Sin ^c  

^a Hanbat National University   (South Korea)

^b LG Display Co Ltd   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

A1. Optical properties; A1. RF magnetron sputtering method; A3. Deposition RF power; B1. Amorphous silicon carbide (a SiC); B2. Passivation layer

Indexed keywords

A1. OPTICAL PROPERTIES; A3. DEPOSITION RF POWER; ALTERNATIVE MATERIALS; B2. PASSIVATION LAYER; CARRIER LIFETIME MEASUREMENTS; ELLIPSOMETERS; GLASS SUBSTRATES; P-TYPE SILICON; PASSIVATION LAYER; RF MAGNETRON SPUTTERING METHOD; RF-POWER; UV VISIBLE SPECTROSCOPY;

AMORPHOUS FILMS; AMORPHOUS SILICON; CARRIER LIFETIME; INVESTMENTS; MAGNETRON SPUTTERING; REFRACTIVE INDEX; SILICON CARBIDE; SILICON NITRIDE; SILICON OXIDES; SUBSTRATES;

PASSIVATION;

EID: 79960159309     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.093     Document Type: Conference Paper

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