SCOPUS 정보 검색 플랫폼

Volumn 717-720, Issue , 2012, Pages 1283-1286

Fabrication of silicon carbide thin film as a stabilizing layer for improving the stability of porous silicon photodiodes

(2) Naderi, Nima a Md Hashim, Roslan a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

Porous silicon; Silicon carbide; Stabilization of photodiodes; Thermal carbonization

Indexed keywords

ACETYLENE; CARBONIZATION; CRYSTALLITE SIZE; ELECTROCHEMICAL ETCHING; FABRICATION; FILM PREPARATION; FLOW OF GASES; HYDROGEN BONDS; LIGHTING; PHOTODIODES; SEMICONDUCTOR LASERS; SILICON CARBIDE; THERMAL CONDUCTIVITY; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

HYDROGEN TERMINATION; METAL-SEMICONDUCTOR-METAL PHOTODIODES; POROUS SILICON LAYERS; PULSED ELECTROCHEMICAL ETCHINGS; SILICON CARBIDE THIN FILM; SILICON CARBIDES (SIC); STABILIZATION OF PHOTODIODES; THERMAL CARBONIZATION;

POROUS SILICON;

EID: 84861417306 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.717-720.1283 Document Type: Conference Paper

Times cited : (8)

References (10)

1
- 41549134445
- G. Mazzeo, J.L. Reverchon, G. Conte, A. Dussaigne, J.Y. Duboz, Solid-State Electronics, 52 (2008) 795-800.
- (2008) , vol.52 , pp. 795-800
- Mazzeo, G.¹ Reverchon, J.L.² Conte, G.³ Dussaigne, A.⁴ Duboz, J.Y.⁵ Electronics, S.-S.⁶

2
- 33947380967
- B. Mahmoudi, N. Gabouze, L. Guerbous, M. Haddadi, H. Cheraga, K. Beldjilali, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 138 (2007) 293-297.
- (2007) Materials Science and Engineering B: Solid-state Materials for Advanced Technology , vol.138 , pp. 293-297
- Mahmoudi, B.¹ Gabouze, N.² Guerbous, L.³ Haddadi, M.⁴ Cheraga, H.⁵ Beldjilali, K.⁶

3
- 42949100410
- J. Tuura, M. Björkqvist, J. Salonen, V.-P. Lehto, Sensors and Actuators B: Chemical, 131 (2008) 627-632.
- (2008) Sensors and Actuators B: Chemical , vol.131 , pp. 627-632
- Tuura, J.¹ Björkqvist, M.² Salonen, J.³ Lehto, V.-P.⁴

4
- 63849103211
- R.N. Ghosh, R. Loloee, T. Isaacs-Smith, J.R. Williams, Materials Science Forum 600-603 (2009) 739-742.
- (2009) Materials Science Forum , vol.600-603 , pp. 739-742
- Ghosh, R.N.¹ Loloee, R.² Isaacs-Smith, T.³ Williams, J.R.⁴

5
- 34249036396
- A. Keffous, K. Bourenane, M. Kechouane, N. Gabouze, T. Kerdja, L. Guerbous, S. Lafane, Journal of Luminescence, 126 (2007) 561-565.
- (2007) Journal of Luminescence , vol.126 , pp. 561-565
- Keffous, A.¹ Bourenane, K.² Kechouane, M.³ Gabouze, N.⁴ Kerdja, T.⁵ Guerbous, L.⁶ Lafane, S.⁷

6
- 0037402015
- Rittenhouse, T., Solid State Communications, 126 (2003) 245-250.
- (2003) Solid State Communications , vol.126 , pp. 245-250
- Rittenhouse, T.¹

7
- 0030784385
- M.A. Butturi, M.C. Carotta, G. Martinelli, L. Passari, G.M. Youssef, A. Chiorino, G. Ghiotti, Solid State Communications, 101 (1997) 11-16.
- (1997) Solid State Communications , vol.101 , pp. 11-16
- Butturi, M.A.¹ Carotta, M.C.² Martinelli, G.³ Passari, L.⁴ Youssef, G.M.⁵ Chiorino, A.⁶ Ghiotti, G.⁷

8
- 77649202744
- B. Gelloz, N. Koshida, Thin Solid Films, 518 (2010) 3276-3279.
- (2010) Thin Solid Films , vol.518 , pp. 3276-3279
- Gelloz, B.¹ Koshida, N.²

9
- 0000287198
- D. Stievenard, D. Deresmes, Applied Physics Letters, 67 (1995) 1570-1572.
- (1995) Applied Physics Letters , vol.67 , pp. 1570-1572
- Stievenard, D.¹ Deresmes, D.²

10
- 84890059059
- Nanocrystalline porous silicon
- S. Basu (Ed.)
- S. Basu, J. Kanungo, Nanocrystalline Porous Silicon, in: S. Basu (Ed.) Crystalline Silicon - Properties and Uses, In Tech, 2011.
- (2011) Crystalline Silicon - Properties and Uses, in Tech
- Basu, S.¹ Kanungo, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.