Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

Journal of Alloys and Compounds

Volumn 509, Issue 9, 2011, Pages 3963-3966

  Song, Chao ^a,b   Rui, Yunjun ^a   Wang, Quanbiao ^a   Xu, Jun ^a   Li, Wei ^a   Chen, Kunji ^a   Zuo, Yuhua ^c   Wang, Qiming ^c  

^a NANJING UNIVERSITY   (China)

^b HANSHAN NORMAL UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Crystal structure; Electronic properties; Silicon carbide; Thin films

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CARRIER TRANSPORT PROCESS; CRYSTALLINITIES; DARK CONDUCTIVITY; HYDROGENATED AMORPHOUS SILICON CARBIDE; MATRIX; ORDERS OF MAGNITUDE; RAMAN SPECTRA; SI NANOCRYSTAL; TEMPERATURE-DEPENDENT CONDUCTIVITY; THERMALLY ACTIVATED; TRANSPORT PROCESS;

AMORPHOUS FILMS; ANNEALING; CRYSTAL STRUCTURE; DEPOSITION; ELECTRONIC PROPERTIES; NANOCRYSTALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 79551686367     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.12.191     Document Type: Article

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