Band gap characterization and photoluminescence properties of SiC nanowires

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 1, 2011, Pages 213-217

  Chen, Jianjun ^a   Tang, Weihua ^a   Xin, Lipeng ^a   Shi, Qiang ^a  

^a ZHEJIANG SCI TECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BAND GAPS; HEXAGONAL PRISM; HIERARCHICAL NANOSTRUCTURES; INDIRECT TRANSITION; PHOTOLUMINESCENCE PEAK; PHOTOLUMINESCENCE PROPERTIES; SCANNING ELECTRON MICROSCOPE; SIC NANOWIRE; SILICA XEROGEL; TYPICAL STACKING FAULTS; UV-VIS ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY; CARBOTHERMAL REDUCTION; ENERGY GAP; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICA GEL; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

NANOWIRES;

EID: 79551685546     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-010-5943-2     Document Type: Article

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