Fabrication and performance of N-doped ZnO UV photoconductive detector

Journal of Alloys and Compounds

Volumn 522, Issue , 2012, Pages 118-122

  Shinde, S S ^a   Rajpure, K Y ^a  

^a SHIVAJI UNIVERSITY   (India)

Author keywords

Alumina; N:ZnO; Spray pyrolysis; Ultraviolet photodetector; ZnO buffer layer

Indexed keywords

ALUMINA SUBSTRATES; FAST RESPONSE; FORWARD BIAS; IV CHARACTERISTICS; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR CONTACTS; N-DOPED; N-DOPING; PHOTOCONDUCTIVE DETECTORS; PHOTOCONDUCTIVE EFFECT; PHOTOCONDUCTIVE UV DETECTORS; PHOTOGENERATED HOLES; PHOTORESPONSES; POLYCRYSTALLINE FILM; SPRAY-DEPOSITED; ULTRA-VIOLET; ULTRAVIOLET PHOTODETECTOR; UV-LIGHT ILLUMINATION; ZNO; ZNO BUFFER LAYER; ZNO FILMS; ZNO THIN FILM;

ALUMINA; DETECTORS; FABRICATION; METALLIC FILMS; PHOTOCONDUCTIVITY; PHOTODETECTORS; SPRAY PYROLYSIS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84857921671     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.01.118     Document Type: Article

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