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Journal of Luminescence

Volumn 71, Issue 1, 1997, Pages 77-82

Photoluminescence enhancement and degradation in porous silicon: Evidence for nonconventional photoinduced defects

(4) El Houichet, H a Oueslati, M a Bessais B b Ezzaouia, H b

a FACULTÉ DES SCIENCES DE TUNIS (Tunisia)

b Institut National de Recherche Scientifique et Technique Tunis (Tunisia)

Author keywords

Photoinduced defects; Photoluminescence; Porous silicon; Relaxation

Indexed keywords

CRYSTAL DEFECTS; DEGRADATION; DESORPTION; LASER BEAM EFFECTS; OXIDATION; PHOTOCHEMICAL REACTIONS; POROSITY; POROUS SILICON; RELAXATION PROCESSES; THERMAL EFFECTS;

LASER EXCITATION; NONRADIATIVE RECOMBINATION CENTERS; PHOTOINDUCED DEFECTS;

PHOTOLUMINESCENCE;

EID: 0030736070 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(96)00101-9 Document Type: Article

Times cited : (14)

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