Growth of 3C-SiC layers on Si substrates with a novel stress relaxation structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 10, 2001, Pages 5907-5908

  Irokawa, Y ^a   Kodama, M ^a   Kachi, T ^a  

^a Rd Management Section   (Japan)

Author keywords

3C SiC; LPCVD; Micro Raman spectroscopy; Stress relaxation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON CARBIDE; STRESS RELAXATION;

CRYSTAL QUALITY; HETEROEPITAXIAL GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0035485385     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5907     Document Type: Article

References (10)