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Volumn 4, Issue 24, 2012, Pages 7743-7750

In situ hard mask materials: A new methodology for creation of vertical silicon nanopillar and nanowire arrays

(5) Ghoshal, Tandra a,b Senthamaraikannan, Ramsankar a,b Shaw, Matthew T a,b,c Holmes, Justin D a,b Morris, Michael A a,b

a UNIVERSITY COLLEGE CORK (Ireland)

b TRINITY COLLEGE DUBLIN (Ireland)

c Intel Ireland Ltd (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; BLOCK COPOLYMERS; ETCHING; INDUCTIVELY COUPLED PLASMA; IRON OXIDES; POROUS SILICON; SILICON; SILICON OXIDES;

CRYSTALLINITIES; ETCH PROCESSING; ETCHING CONDITION; HARD MASKS; HIGH ASPECT RATIO; INCLUSION METHOD; MICROSCOPIC TECHNIQUES; MORPHOLOGY AND SIZE; NANO-DOT ARRAYS; NANOPILLAR; NANOPILLARS; NANOWIRE ARRAYS; PHOTOLUMINESCENCE PROPERTIES; SILICON NANOCRYSTALS; SUBSTRATE SURFACE; TECHNOLOGICAL APPLICATIONS; UNIFORM DIAMETER;

NANOWIRES;

EID: 84870216843 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr32693k Document Type: Article

Times cited : (49)

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