Energy gap of nanoscale Si rods

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3619-3621

  Yorikawa, H ^a   Uchida, H ^a   Muramatsu, S ^a  

^a UTSUNOMIYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001038513     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361416     Document Type: Article

References (16)

1. Light Emission from Silicon, edited by S. S. Iyer, L. T. Canham, and R. T. Collins, MRS Proceedings No. 256 (Material Research Society, Pittsburgh, 1992); D. J. Lockwood, Solid State Commun. 92, 101 (1994); Light Emission from Novel Silicon Materials, edited by Y. Kanemitsu, M. Kondo, K. Takeda, and H. Kamimura (Physical Society of Japan, Tokyo, 1994); and Porous Silicon and Related Materials, edited by R. Hérino and W. Lang (Elsevier, Amsterdam, 1995).
2. Light Emission from Silicon, edited by S. S. Iyer, L. T. Canham, and R. T. Collins, MRS Proceedings No. 256 (Material Research Society, Pittsburgh, 1992); D. J. Lockwood, Solid State Commun. 92, 101 (1994); Light Emission from Novel Silicon Materials, edited by Y. Kanemitsu, M. Kondo, K. Takeda, and H. Kamimura (Physical Society of Japan, Tokyo, 1994); and Porous Silicon and Related Materials, edited by R. Hérino and W. Lang (Elsevier, Amsterdam, 1995).
3. Light Emission from Silicon, edited by S. S. Iyer, L. T. Canham, and R. T. Collins, MRS Proceedings No. 256 (Material Research Society, Pittsburgh, 1992); D. J. Lockwood, Solid State Commun. 92, 101 (1994); Light Emission from Novel Silicon Materials, edited by Y. Kanemitsu, M. Kondo, K. Takeda, and H. Kamimura (Physical Society of Japan, Tokyo, 1994); and Porous Silicon and Related Materials, edited by R. Hérino and W. Lang (Elsevier, Amsterdam, 1995).
4. Light Emission from Silicon, edited by S. S. Iyer, L. T. Canham, and R. T. Collins, MRS Proceedings No. 256 (Material Research Society, Pittsburgh, 1992); D. J. Lockwood, Solid State Commun. 92, 101 (1994); Light Emission from Novel Silicon Materials, edited by Y. Kanemitsu, M. Kondo, K. Takeda, and H. Kamimura (Physical Society of Japan, Tokyo, 1994); and Porous Silicon and Related Materials, edited by R. Hérino and W. Lang (Elsevier, Amsterdam, 1995).
5. G. D. Sanders and Y. C. Chang, Phys. Rev. B 45, 9202 (1992).
6. C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11024 (1993).
7. B. Delley and E. F. Steigmeier, Phys. Rev. B 47, 1397 (1993).
8. M. Y. Shen and S. L. Zhang, Phys. Lett. A 176, 254 (1993).
9. T. Uda and M. Hirao, J. Phys. Soc. Jpn. 63, 97 (1994), Suppl. B.
10. C. Y. Yeh, S. B. Zhang, and A. Zunger. Phys. Rev. B 50, 14405 (1994).
11. R. J. Needs, S. Bhattacharjee, K. J. Nash, A. Qteish, A. J. Read, and L. T. Canham, Phys. Rev. B 50, 14223 (1994).
12. S. G. Lee, B. H. Cheong, K. H. Lee, and K. J. Chang, Phys. Rev. B 51, 1762 (1995).
13. V. Heine, in Solid State Physics, edited by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York, 1980), Vol. 35, p. 1.
14. J. Park, S. Muramatsu, M. Kitamura, H. R. P. Inoue, and H. Chen, Mater. Chem. Phys. 33, 214 (1993).
15. H. Kimura, S. Imanaga, Y. Hayafuji, and H. Adachi, J. Phys. Soc. Jpn. 62, 2663 (1993).
16. W. A. Harrison, Electronic Structure and the Properties of Solids (Freeman, New York, 1980).