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Volumn 20, Issue 6, 2009, Pages
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The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYOGENIC PLASMAS;
DEEP REACTIVE ION ETCHINGS;
DRIE PROCESS;
ETCH MASKS;
ETCH SELECTIVITIES;
ETCHING STEPS;
FEATURE SIZES;
HIGH ASPECT RATIO NANO-STRUCTURES;
ION-IMPLANTED SILICONS;
MASK EROSIONS;
SILICON NANOSTRUCTURES;
SURFACE LAYERS;
UNDOPED MATERIALS;
ASPECT RATIO;
CRYOGENICS;
FOCUSED ION BEAMS;
IONS;
NANOSTRUCTURES;
PHOTORESISTS;
PLASMA ETCHING;
PRESSURE DROP;
REACTIVE ION ETCHING;
GALLIUM;
NANOMATERIAL;
SILICON;
ARTICLE;
CHEMICAL COMPOSITION;
IMPLANTATION;
PRIORITY JOURNAL;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 65249116358
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/6/065307 Document Type: Article |
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Times cited : (87)
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References (8)
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