Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air

Carbon

Volumn 52, Issue , 2013, Pages 83-89

  Oliveira Jr , Myriano H ^a   Schumann, Timo ^a   Fromm, Felix ^b   Koch, Roland ^b   Ostler, Markus ^b   Ramsteiner, Manfred ^a   Seyller, Thomas ^b   Lopes, Joao Marcelo J ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-ANNEALING; BI-LAYER; CARBON LAYERS; COVALENT BONDING; GRAPHENE LAYERS; HIGH QUALITY; OXYGEN INTERCALATION; SIC(0 0 0 1);

ANNEALING; BUFFER LAYERS; ELECTRONIC PROPERTIES; OXYGEN; PHOSPHORUS; SILICON CARBIDE; SURFACE DEFECTS;

GRAPHENE;

EID: 84869490871     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.09.008     Document Type: Article

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