Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 4, 2010, Pages 687-690

  Weingart, S ^a   Bock, C ^a   Kunze, U ^a   Emtsev, K V ^b   Seyller, Th ^b   Ley, L ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Charge carrier density; Charge carrier mobility; Epitaxial graphene; Magnetotransport

Indexed keywords

ANNEALING CONDITION; CHARGE CARRIER DENSITY; CONSTANT CHARGES; EPITAXIAL GRAPHENE; FILM TOPOGRAPHY; GRAPHENES; GRAPHITIZATION PROCESS; GROWTH CONDITIONS; LOW TEMPERATURES; MAGNETO-TRANSPORT MEASUREMENT; MAGNETOTRANSPORTS; PREPARATION CONDITIONS; ROOM TEMPERATURE; SIC SUBSTRATES; SIC(0 0 0 1); TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; GRAPHENE; MONOLAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOIL CONSERVATION; SULFUR COMPOUNDS; TOPOGRAPHY; TRANSPORT PROPERTIES;

GRAPHITE;

EID: 76949105049     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.11.006     Document Type: Article

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