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Volumn 84, Issue 23, 2011, Pages

Strain and charge carrier coupling in epitaxial graphene

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EID: 84855379723     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.235422     Document Type: Article
Times cited : (58)

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    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.84.235422 for descriptions of the lack of structural disorder (i.e. polishing defects) within the SiC substrate and the measured Raman shifts of the G- and 2D-bands of sub-ML and 1ML graphene on SiC(0001).


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