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Journal of Vacuum Science and Technology B

Volumn 28, Issue 5, 2010, Pages 985-992

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

(15) Dimitrakopoulos, Christos a Lin, Yu Ming a Grill, Alfred a Farmer, Damon B a Freitag, Marcus a Sun, Yanning a Han, Shu Jen a Chen, Zhihong a Jenkins, Keith A a Zhu, Yu a Liu, Zihong a McArdle, Timothy J a Ott, John A a Wisnieff, Robert a Avouris, Phaedon a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON WAFERS;

ATOMIC-FORCE-MICROSCOPY; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; GROWTH PROCESS; HALL BARS; HIGH-FREQUENCY TRANSISTORS; SI FACES; STRUCTURE AND MORPHOLOGY; TWO-LAYER; WAFER SCALE;

SILICON CARBIDE;

EID: 77956811594 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3480961 Document Type: Article

Times cited : (103)

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