SCOPUS 정보 검색 플랫폼

Journal of the Ceramic Society of Japan

Volumn 120, Issue 1407, 2012, Pages 447-457

Doping effects in amorphous oxides

(3) Funabiki, Fuji a Kamiya, Toshio a Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Amorphous materials; Codoping; Defect; Doping; Oxide; Rare earth; Semiconductor; Silica

Indexed keywords

CRYSTALLINE MATERIALS; DEFECTS; DOPING (ADDITIVES); ELECTRON AFFINITY; GLASS; GLASS MANUFACTURE; IMPURITIES; LIGHT TRANSMISSION; METAL IONS; OXIDE SEMICONDUCTORS; OXIDES; RADIATION EFFECTS; RARE EARTHS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICA;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); CO-DOPING; CONDUCTION-BAND MINIMUM; CRYSTALLINE LATTICE; OPTICAL AND ELECTRICAL PROPERTIES; SEMICONDUCTOR TECHNOLOGY; SOLUBILITY ENHANCEMENT; STABILIZATION ENERGY;

AMORPHOUS MATERIALS;

EID: 84869015223 PISSN: 18820743 EISSN: 13486535 Source Type: Journal
DOI: 10.2109/jcersj2.120.447 Document Type: Review

Times cited : (43)

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