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Volumn 206, Issue 5, 2009, Pages 860-867

Electronic structure of the amorphous oxide semiconductor a-lnGaZnO 4-x: Tauc-Lorentz optical model and origins of subgap states

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ATOMIC CONFIGURATION; FORMATION ENERGIES; GENERALIZED GRADIENT APPROXIMATIONS; LARGE DISPERSION; LINEAR DEPENDENCE; LOCALIZED STATE; LORENTZ; OPTICAL ABSORPTION SPECTRUM; OPTICAL MODELS; OPTIMIZED PARAMETER; OXYGEN DEFICIENCY; OXYGEN DEFICIENT; PARAMETERIZED; PHOTON ENERGY; ROOT-MEAN SQUARE ERRORS; SHALLOW DONORS; TAUC-LORENTZ MODELS; TRANSITION ENERGY; UNIT-CELL VOLUME;

EID: 65649106511     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881303     Document Type: Article
Times cited : (238)

References (39)
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  • 31
    • 84857635974 scopus 로고    scopus 로고
    • http://www.kagaku.com/malt/
  • 33
    • 84857628829 scopus 로고    scopus 로고
    • http://www.fiz-informationsdienste.de/en/DB/icsd/ index.html


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.