Operation characteristics of thin-film transistors using very thin amorphous In-Ga-Zn-O channels

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Shao, Lijie ^a   Nomura, Kenji ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL THICKNESS; CONTINUOUS FILMS; DEEP TRAPS; DISCONTINUOUS FILMS; DOPING EFFICIENCY; OPERATION CHARACTERISTIC; ORDER OF MAGNITUDE; SHALLOW TRAPS;

AMORPHOUS FILMS; GALLIUM; SEMICONDUCTOR DOPING; ZINC;

THIN FILM TRANSISTORS;

EID: 79952516333     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3555070     Document Type: Article

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