Tungsten oxides. I. Effects of oxygen vacancies and doping on electronic and optical properties of different phases of WO3

Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

  Migas, D B ^a   Shaposhnikov, V L ^a   Rodin, V N ^a   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ABSORPTION COEFFICIENTS; BAND GAPS; GAP REGIONS; IMPURITY BANDS; LOWER ENERGIES; ROOM TEMPERATURE; SULFUR DOPING; TUNGSTEN OXIDE;

ABSORPTION; ABSORPTION SPECTRA; DOPING (ADDITIVES); OPTICAL PROPERTIES; OXYGEN; SULFUR; TUNGSTEN; VACANCIES;

OXYGEN VACANCIES;

EID: 78649270477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3505688     Document Type: Article

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