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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 13, 2000, Pages 8584-8587

Absorption edge in silica glass

(2) Saito, K a Ikushima, A J a

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS; SILICON DIOXIDE;

ARTICLE; CALCULATION; TEMPERATURE DEPENDENCE; ULTRAVIOLET SPECTROPHOTOMETRY;

EID: 0034289707 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.8584 Document Type: Article

Times cited : (133)

References (9)

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5
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- edited by J. I. Pankove (Academic, New York), Chap. 2
- (1984) Hydrogenated Amorphous Silicon, Part B, Vol. 21: Semiconductors and Semimetals
- Cody, G.D.¹

6
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- (1981) Phys. Rev. B , vol.23 , pp. 1495
- Allen, P.B.¹ Cardona, M.²

7
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- Yamasaki, S.¹

8
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- (1999) J. Non-Cryst. Solids , vol.259 , pp. 81
- Saito, K.¹ Ikushima, A.J.²

9
- 0026240981
- (1991) J. Ceram. Soc. Jpn. , vol.99 , pp. 923
- Griscom, D.L.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.