Role of hydration on the electronic transport through molecular junctions on silicon

Journal of Physical Chemistry C

Volumn 116, Issue 33, 2012, Pages 17753-17763

  Clément, Nicolas ^a   Guérin, David ^a   Pleutin, Stéphane ^a   Godey, Sylvie ^a   Vuillaume, Dominique ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL TAILORING; CURRENT VOLTAGE CURVE; DEVICE PROPERTIES; DIELECTRIC RESPONSE; ELECTRICAL PERFORMANCE; ELECTRICAL TRANSPORT PROPERTIES; ELECTROCHEMICAL CHARGE; ELECTRONIC TRANSPORT; FABRICATION PROCESS; HYDROGEN-TERMINATED SILICON; HYDROPHOBIC LAYERS; MOLECULAR DEVICE; MOLECULAR ELECTRONICS DEVICE; MOLECULAR JUNCTION; ORDERS OF MAGNITUDE; ORGANIC MOLECULES; RANDOM TELEGRAPH SIGNALS; REDOX COUPLE; REPRODUCIBILITIES; SEMICONDUCTOR CHANNELS; WATER MOLECULE;

CHARGE TRANSFER; ELECTRIC PROPERTIES; HYDROGEN; MOLECULAR ELECTRONICS; MOLECULES; MONOLAYERS; SILICON; TELEGRAPH; TRANSPORT PROPERTIES;

SEMICONDUCTOR JUNCTIONS;

EID: 84868559255     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3018106     Document Type: Article

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