Noise characteristics of charge tunneling via localized states in metal - Molecule - Metal junctions

ACS Nano

Volumn 4, Issue 8, 2010, Pages 4426-4430

  Kim, Youngsang ^a,c   Song, Hyunwook ^b,c   Kim, Dongwoo ^a   Lee, Takhee ^b   Jeong, Heejun ^a  

^a Hanyang University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

1 f noise; Localized states; Molecular junctions; Random telegraph noise; Shot noise

Indexed keywords

1/F NOISE; CHARGE TRANSPORT; CHARGE TUNNELING; DE-TRAPPING; ELECTRONIC JUNCTIONS; LOCALIZED STATE; METAL-MOLECULE-METAL JUNCTIONS; MOLECULAR JUNCTION; NOISE CHARACTERISTIC; NOISE CHARACTERIZATION; NOISE MEASUREMENTS; RANDOM TELEGRAPH NOISE;

SHOT NOISE; TELEGRAPH;

METALS;

GOLD; HEXANE; ORGANOMETALLIC COMPOUND;

ARTICLE; CHEMISTRY; ELECTRODE; ELECTRON TRANSPORT; ELECTRONICS; TEMPERATURE;

ELECTRODES; ELECTRON TRANSPORT; ELECTRONICS; GOLD; HEXANES; ORGANOMETALLIC COMPOUNDS; TEMPERATURE;

EID: 78650104239     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100255b     Document Type: Article

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