Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 999-1002

  Clement N ^a   Tonneau, D ^a   Dallaporta, H ^a   Bouchiat, V ^a   Fraboulet, D ^b   Mariole, D ^b   Gautier, J ^b   Safarov, V ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b CEA LETI   (France)

Author keywords

AFM; Lithography; Silicon nanostructures; Silicon on insulator

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; FABRICATION; LITHOGRAPHY; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS; TRANSPORT PROPERTIES; WSI CIRCUITS;

SILICON NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0036492929     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00288-6     Document Type: Article

References (15)

1. Chemical physics of thin film deposition processes for micro- and nano-technologies