First principles calculation of dopant solution energy in HfO 2 polymorphs

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Saitoh, M ^a   Mizoguchi, T ^b   Tohei, T ^c   Ikuhara, Y ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DIFFERENCES; FIRST-PRINCIPLES CALCULATION; LA DOPING; N-DOPING; OXIDIZATION; REDUCTION ATMOSPHERES; SOLUTION BEHAVIOR; SOLUTION ENERGY; TETRAGONAL PHASE; TETRAGONAL PHASIS;

DOPING (ADDITIVES); HAFNIUM OXIDES; LOCAL DENSITY APPROXIMATION;

SILICON;

EID: 84868357951     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755797     Document Type: Article

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