Mechanism of Hf-silicide formation at interface between poly-Si electrode and HfO2/Si gate stacks studied by photoemission and x-ray absorption spectroscopy

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Takahashi, H ^a   Okabayashi, J ^a   Toyoda, S ^a   Kumigashira, H ^a   Oshima, M ^a   Ikeda, K ^b   Liu, G L ^b   Liu, Z ^b   Usuda, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRODES; ELECTROMAGNETIC WAVE ABSORPTION; INTERFACES (MATERIALS); POLYSILICON; SPECTROSCOPIC ANALYSIS;

GATE STACKS; POLY-SI ELECTRODES; SILICIDES; X-RAY ABSORPTION SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 33745261722     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206610     Document Type: Article

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