Structural and surface potential characterization of annealed HfO 2 and (HfO 2) x(SiO 2) 1-x films

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2365-2373

  Ludeke, R ^a   Gusev, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CHARGE TRAPPING (CT); CONTACT POTENTIAL DIFFERENCES (CPD); DIFFERENTIAL CAPACITANCE;

AMORPHOUS MATERIALS; ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTALLIZATION; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICA; SURFACE TOPOGRAPHY; ULTRAHIGH VACUUM;

HAFNIUM COMPOUNDS;

EID: 4344640669     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767970     Document Type: Article

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