Novel Multi-bit SONOS Type Flash Memory Using a High-k Charge Trapping Layer

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 27-28

  Sugizaki, T ^a   Kobayashi, M ^a   Ishidao, M ^a   Minakata, H ^a   Yamaguchi, M ^a   Tamura, Y ^a   Sugiyama, Y ^a   Nakanishi, T ^a   Tanaka, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; OXIDATION; POLYSILICON; SINTERING; FLASH MEMORY; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; SILICA;

CHARGE LOSS; CHARGE TRAPPING;

FLASH MEMORY; CHARGE TRAPPING;

2-BIT/CELL; CHARGE LOSS; CHARGE MIGRATION; CHARGE TRAPPING LAYERS; HIGH- K; HIGH-K DIELECTRIC FILMS; MULTI-BITS; RETENTION CHARACTERISTICS; SONOS FLASH MEMORY; STRUCTURE-BASED;

EID: 0141761571     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

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2. E. Lusky et.al. TEEE EDL, Vol.22, p.557, 2001
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