Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires

ACS Nano

Volumn 6, Issue 10, 2012, Pages 8887-8895

  Fukata, Naoki ^a   Mitome, Masanori ^a   Sekiguchi, Takashi ^a   Bando, Yoshio ^a   Kirkham, Melanie ^b,d   Hong, Jung Il ^b,c   Wang, Zhong Lin ^a,b   Snyder, Robert L ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Georgia Institute of Technology   (United States)

^c Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

core shell nanowires; doping; Raman scattering; X ray diffraction

Indexed keywords

BAND-OFFSET; COMPRESSIVE AND TENSILE STRESS; CORE REGION; CORE-SHELL; CORE-SHELL NANOWIRES; FANO EFFECTS; HIGH MOBILITY; IMPURITY DOPING; IMPURITY SCATTERING; SI/GE; SITE SELECTIVE; TRANSISTOR CHANNELS;

DOPING (ADDITIVES); EXCITONS; GERMANIUM; NANOWIRES; PHOSPHORUS; RAMAN SCATTERING; SILICON; X RAY DIFFRACTION;

SHELLS (STRUCTURES);

GERMANIUM; NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SILICON; STRESS, MECHANICAL; SURFACE PROPERTIES;

EID: 84867783372     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn302881w     Document Type: Article

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