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Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

(5) Schlitz, Ruth A a Perea, Daniel E a Lensch Falk, Jessica L a Hemesath, Eric R a Lauhon, Lincoln J a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; AXIAL VARIATIONS; BORON CONCENTRATIONS; BORON-DOPED SILICON; CHANNEL RESISTANCE; CORE MATERIAL; DOPANT DISTRIBUTION; DOPING PROFILES; ELECTRICAL PROPERTY; GOLD CATALYSTS; LINEAR BEHAVIOR; NANOWIRE DEVICES; NANOWIRE SURFACE; NONLINEAR CONTACT; NONUNIFORM; SIMPLE MODEL; SINGLE NANOWIRES; SURFACE DOPING; SURFACE LAYERS; VAPOR LIQUID SOLIDS;

BORON; CONTACT RESISTANCE; COREMAKING; ELECTRIC PROPERTIES; ELECTRIC WIRE; NANOWIRES; SURFACES; TOMOGRAPHY;

DOPING (ADDITIVES);

EID: 70350395472 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3250431 Document Type: Article

Times cited : (48)

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