Band-offset driven efficiency of the doping of sige core-shell nanowires

Nano Letters

Volumn 11, Issue 2, 2011, Pages 594-598

  Amato, Michele ^a,b,c   Ossicini, Stefano ^a,b   Rurali, Riccardo ^c  

^a CNR   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

band offset; DFT; doping; electron hole gas; nanostructures for photovoltaics; SiGe nanowires

Indexed keywords

BAND OFFSETS; DFT; DOPING; ELECTRON/HOLE GAS; SI-GE NANOWIRES;

HOLE CONCENTRATION; PHOTOVOLTAIC EFFECTS; SILICON ALLOYS;

NANOWIRES;

GERMANIUM; NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 79851482776     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103621s     Document Type: Article

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