Phonon confinement effect of silicon nanowires synthesized by laser ablation

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Fukata, N ^a,c   Oshima, T ^a   Murakami, K ^a   Kizuka, T ^a   Tsurui, T ^b   Ito, S ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; LASER ABLATION; PHONONS; RAMAN SCATTERING; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); THERMOOXIDATION;

ASYMMETRIC BROADENING; OPTICAL PHONON PEAKS; PHONON CONFINEMENT EFFECTS; SILICON NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 20844462349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1931055     Document Type: Article

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