Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures

Nano Letters

Volumn 11, Issue 10, 2011, Pages 4200-4206

  Dayeh, Shadi A ^a   Wang, Jian ^b   Li, Nan ^a   Huang, Jian Yu ^c   Gin, Aaron V ^c   Picraux, S Thomas ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

germanium; heterostructure; kinking; Nanowire; silicon; twin

Indexed keywords

ATOMIC LEVELS; ATOMISTIC SIMULATIONS; COMPOSITION MODULATIONS; DEFECT FORMATION; KINKING; LAYER-BY-LAYER GROWTH; MORPHOLOGY CONTROL; NUCLEATION SITES; SEMICONDUCTOR NANOWIRE; SINGLE POINT; SMALL SIZE; STACKING DEFECTS; STACKING SEQUENCE; TWIN; TWIN BOUNDARIES; VAPOR-LIQUID-SOLID GROWTH;

DEFECTS; GERMANIUM; HETEROJUNCTIONS; MORPHOLOGY; NANOWIRES; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; STRUCTURAL ANALYSIS;

SEMICONDUCTOR GROWTH;

EID: 80054029084     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202126q     Document Type: Article

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