Doping and Raman characterization of boron and phosphorus atoms in germanium nanowires

ACS Nano

Volumn 4, Issue 7, 2010, Pages 3807-3816

  Fukata, Naoki ^a,b   Sato, Keisuke ^a   Mitome, Masanori ^a   Bando, Yoshio ^a   Sekiguchi, Takashi ^a   Kirkham, Melanie ^c   Hong, Jung Il ^c   Wang, Zhong Lin ^c   Snyder, Robert L ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Georgia Institute of Technology   (United States)

Author keywords

boron; germanium nanowires; phosphorus; Raman scattering

Indexed keywords

CHEMICAL BONDING STATE; CRYSTALLINE GE; ELECTRICAL ACTIVITIES; FANO EFFECTS; GERMANIUM NANOWIRES; GROWTH DIRECTIONS; IMPURITY ATOMS; IMPURITY DOPING; MICRO-RAMAN SCATTERING; P-TYPE; PHOSPHORUS ATOM; RAMAN CHARACTERIZATION; SEMICONDUCTOR NANOWIRE; TAPERED STRUCTURE; THREE-STEP PROCESS; UNIFORM DIAMETER;

BORON; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRIC WIRE; GERMANIUM; NANOWIRES; PHOSPHORUS; RAMAN SCATTERING; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

ATOMS;

EID: 77955539801     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100734e     Document Type: Article

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