Spectroscopic analysis of Al and N diffusion in HfO 2

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Lysaght, P S ^a   Woicik, J C ^b   Sahiner, M A ^c   Price, J ^a   Weiland, C ^b   Kirsch, P D ^a  

^a SEMATECH   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c SETON HALL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; CAP LAYERS; CORE LEVEL SPECTROSCOPY; EXTENDED X-RAY ABSORPTION FINE STRUCTURE MEASUREMENTS; FILM STRUCTURE; LOCAL BONDING; SECONDARY ION MASS SPECTROSCOPY; SI SUBSTRATES; THERMAL REACTIONS; X-RAY PHOTOELECTRONS;

ALUMINUM; DIFFUSION; EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; INTERFACES (MATERIALS); MICROSTRUCTURE; SECONDARY ION MASS SPECTROMETRY; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY;

HAFNIUM OXIDES;

EID: 84867060393     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754578     Document Type: Article

References (29)

1. S. E. Thompson and S. Parthasarathy, Mater. Today 9 (6), 20 (2006). 10.1016/S1369-7021(06)71539-5
2. T.-H. Cha, D.-G. Park, T.-K. Kim, S.-A. Jang, I.-S. Yeo, J.-S. Roh, and J.-W. Park, Appl. Phys. Lett. 81, 4192, (2002). 10.1063/1.1523651
3. Z. B. Zhang, S. C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M. S. Akbar, J. H. Sim, S. H. Bae, B. Sassman, and B. H. Lee, VLSI Symp. Tech. Dig. 2005, 50. 10.1109/.2005.1469208
4. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000). 10.1063/1.1320464
5. P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. Böcke, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 92, 092901 (2008). 10.1063/1.2890056
6. M. Bosman, Y. Zhang, C. K. Cheng, X. Li, X. Wu, K. L. Pey, C. T. Lin, Y. W. Chen, S. H. Hsu, and C. H. Hsu, Appl. Phys. Lett. 97, 103504 (2010). 10.1063/1.3478446
7. K. Choi, H.-C. Wen, G. Bersuker, R. Harris, and B. Hun Lee, Appl. Phys. Lett. 93, 133506 (2008). 10.1063/1.2993335
8. M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka1, E. Kurosawa1, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji, Tech. Dig. VLSI Symp. 2007, 66. 10.1109/VLSIT.2007.4339729
9. A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota, and M. Hirose, Tech. Dig.-Int. Electron Devices Meet. 2007, 53. 10.1109/IEDM.2007.4418861
10. S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig. VLSI Symp. 2006, 13. 10.1109/VLSIT.2006.1705193
11. V. Mikhelashvili, R. Brener, O. Kreinin, B. Meyler, J. Shneider, and G. Eisenstein, Appl. Phys. Lett. 85, 5950 (2004). 10.1063/1.1836875
12. H. Y. Yu, N. Wu, M. F. Li, C. X. Zhu, B. J. Cho, D. L. Kwang, C.-L. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Chi, and S. Ramanathan, Appl. Phys. Lett. 81, 3618 (2002). 10.1063/1.1519733
13. M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, H. J. Choi, S. W. Nam, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 1071 (2002). 10.1063/1.1499223
14. M. Koyama, Y. Kamimuta, M. Koike, M. Suzuki, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 43, 1788 (2004). 10.1143/JJAP.43.1788
15. M. A. Quevedo-Lopez, M. R. Visokay, J. J. Chambers, M. J. Bevan, A. LiFatou, L. Colombo, M. J. Kim, B. E. Gnade, and R. M. Wallace, J. Appl. Phys. 97, 043508 (2005). 10.1063/1.1846138
16. P. S. Lysaght, J. C. Woicik, M. A. Sahiner, B.-H. Lee, and R. Jammy, Appl. Phys. Lett. 91, 122910 (2007). 10.1063/1.2789180
17. P. S. Lysaght, J. Woicik, D. Fischer, G. I. Bersuker, J. Barnett, B. Foran, H.-H. Tseng, and R. Jammy, J. Appl. Phys. 101, 024105 (2007). 10.1063/1.2422746
18. R. Koba and R. E. Tressler, J. Electrochem. Soc. 135, 144 (1988). 10.1149/1.2095541
19. G. He, L. D. Zhang, G. W. Meng, G. H. Li, Q. Fang, and J. P. Zhang, J. Appl. Phys. 102, 094103 (2007). 10.1063/1.2802994
20. G. Shang, P. W. Peacock, and J. Robertson, Appl. Phys. Lett. 84, 106 (2004). 10.1063/1.1638896
21. A. K. Rumaiz, J. C. Woicik, E. Cockayne, H. Y. Lin, G. Hassnain Jaffari, and S. I. Shah, Appl. Phys. Lett. 95, 262111 (2009). 10.1063/1.3272272
22. J. Price, G. Bersuker, and P. S. Lysaght, J. Vac. Sci. Technol. B 27, 310-312 (2009). 10.1116/1.3021045
23. B. Ravel, Y.-I. Kim, P. M. Woodward, and C. M. Fang, Phys. Rev. B 73, 184121 (2006). 10.1103/PhysRevB.73.184121
24. A. L. Ankudinov, B. Ravel, J. J. Rehr, and S. D. Conradson, Phys. Rev. B 58, 7565 (1998). 10.1103/PhysRevB.58.7565
25. R. E. Hahn, P. R. Suitch, and J. L. Pentecost, J. Am. Ceram. Soc. 68 (10), C-285 (1985). 10.1111/j.1151-2916.1985.tb11534.x
26. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002). 10.1103/PhysRevB.65.233106
27. J. Wang, H. P. Li, and R. Stevens, J. Mater. Sci. 27, 5397 (1992). 10.1007/BF00541601
28. M. A. Sahiner, J. C. Woicik, P. Gao, P. McKeown, M. C. Croft, M. Gartman, and B. Benapfl, Thin Solid Films 515, 6548 (2007). 10.1016/j.tsf.2006.11.171
29. M. Newville, P. Livins, Y. Yacoby, J. J. Rehr, and E. A. Stern, Phys. Rev. B 47, 14126 (1993). 10.1103/PhysRevB.47.14126