Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO 2 gate dielectric

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 50-51

  Zhang, Z B ^b   Song, S C ^a   Huffman, C ^b   Barnett, J ^a   Moumen, N ^c   Alshareef, H ^b   Majhi, P ^d   Hussain, M ^a   Akbar, M S ^a   Sim, J H ^a   Bae, S H ^a   Sassman, B ^a   Lee, B H ^c  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL METAL GATE CMOS; GATE DIELECTRIC; GATE ELECTRODES;

DIELECTRIC MATERIALS; ELECTRODES; HAFNIUM COMPOUNDS; PLASMA ETCHING; TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 33644772724     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469208     Document Type: Conference Paper

References (5)

1. Q. Lu et al., VLSI Tech. Digest 2000, pp. 72.
2. S.B. Samavedam et al., IEDM Tech. Digest 2002, pp. 433.
3. Y.-S. Suh et al., VLSI Tech. Digest 2001, pp. 47.
4. H.C. Zhong et al., IEDM Tech. Digest 2001, pp. 467.
5. G. Brown et al., discussed in SISC 2004.